? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 900 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 10n90 10 a 12n90 12 a 13n90 13 a i dm t c = 25 c, 10n90 40 a pulse width limited by t jm 12n90 48 a 13n90 52 a i ar t c = 25 c 10n90 10 a 12n90 12 a 13n90 13 a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 900 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j =25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 10n90 1.1 ? 12n90 0.9 ? 13n90 0.8 ? pulse test, t 300 s, duty cycle d 2 % hiperfet tm power mosfets n-channel enhancement mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 aa (ixfm) g = gate, d = drain, s = source, tab = drain features z international standard packages z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z synchronous rectification z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control z temperature and lighting controls z low voltage relays advantages z easy to mount with 1 screw (to-247) (isolated mounting screw hole) z space savings z high power density d v dss i d25 r ds(on) ixfh/ixfm 10 n90 900 v 10 a 1.1 ? ? ? ? ? ixfh/ixfm 12 n90 900 v 12 a 0.9 ? ? ? ? ? ixfh/ixft 13 n90 900 v 13 a 0.8 ? ? ? ? ? t rr 250 ns ds91530i(01/03) (tab) g to-268 (ixft) g e c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 6 12 s c iss 4200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 315 pf c rss 90 pf t d(on) 18 50 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 12 50 ns t d(off) r g = 2 ? (external) 51 100 n s t f 18 50 ns q g(on) 123 155 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 27 45 nc q gd 49 80 nc r thjc 0.42 k/w r thck (ixfh/ixfm) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 10n90 10 a 12n90 12 a 13n90 13 a i sm repetitive; 10n90 40 a pulse width limited by t jm 12n90 48 a 13n90 52 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr t j =25 c 250 ns t j = 125 c 400 ns q rm t j =25 c1 c t j = 125 c2 c i rm t j =25 c10a t j = 125 c15a i f = i s -di/dt = 100 a/ s, v r = 100 v dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixfh 10n90 ixfh 12n90 ixfh 13n90 ixfm 10n90 ixfm 12n90 ixft 13n90 dim. millimeter inches min. max. min. max. a 6.4 11.4 .250 .450 a1 3.42 .135 ? b .97 1.09 .038 .043 ? d 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 l 7.93 .312 ? p 3.84 4.19 .151 .165 ? p1 3.84 4.19 .151 .165 q 30.15 bsc 1.187 bsc r 13.33 .525 r1 4.77 .188 s 16.64 17.14 .655 .675 to-204 aa (ixfm) outline pins 1 - gate 2 - source case - drain to-268 (ixft) outline
? 2003 ixys all rights reserved fig. 1. output characteristics fig. 2. input admittance fig. 5. drain current vs. fig. 6. temperature dependence of case temperature breakdown and threshold voltage fig. 3. r ds(on) vs. drain current fig. 4. temperature dependence of drain to source resistance t j - degrees c -50 -25 0 25 50 75 100 125 150 bv/v g(th) - normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 bv dss v gs(th) t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 10n90 t j - degrees c -50 -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i d - amperes 0 5 10 15 20 25 r ds(on) - normalized 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v gs - volts 012345678910 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 v ds - volts 0 5 10 15 20 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 6v 7v v gs = 10v 12n90 i d = 6a 5v t j = 25c t j = 25c t j = 25c v gs = 10v v gs = 15v ixfh 10n90 ixfh 12n90 ixfh 13n90 ixfm 10n90 ixfm 12n90 ixft 13n90
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 fig.7. gate charge characteristic curve fig.8. capacitance curves fig.9. source current vs. source to drain voltage fig.10. transient thermal impedance v sd - volts 0.00.20.40.60.81.01.21.4 i d - amperes 0 2 4 6 8 10 12 14 16 18 v ce - volts 0 5 10 15 20 25 capacitance - pf 0 500 1000 1500 2000 2500 3000 3500 4000 4500 pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal response - k / w 0.001 0.01 0.1 1 c rss c oss c iss d=0.5 d=0.2 single pulse f = 1 mhz v ds = 25v t j = 125c t j = 25c d=0.01 d=0.02 d=0.05 d=0.1 ixfh 10n90 ixfh 12n90 ixfh 13n90 ixfm 10n90 ixfm 12n90 ixft 13n90 gate charge - ncoulombs 0 25 50 75 100 125 150 v ge - volts 0 2 4 6 8 10 v ds = 450v i d = 13a i g = 10ma
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